Thermalization and recombination in exponential band tail states

被引:3
|
作者
Niehus, M. [1 ,2 ]
Schwarz, R. [2 ]
机构
[1] Inst Super Engn Lisboa, Dept Engn elect & Telecomunicacoes & Comp, Rua Conselheiro Emidio Navarro 1, P-1959007 Lisbon, Portugal
[2] Inst Super Tecn, Dept Fis, P-1049001 Lisbon, Portugal
关键词
D O I
10.1002/pssc.200565463
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We present an analytical model that combines the complementary experimental evidence of spatial dispersion (DAP recombination) and energetic dispersion (band tails). The model describes the competition between thermalization and recombination of excess carriers trapped in exponentially distributed (in energy), discrete localized (in space) states. We use the energy dependence of the relaxation rates to derive the energy and time dependence of sub gap photoluminescence. The model predicts that the yellow luminescence band (YLB) and blue luminescence band (BLB) commonly observed in GaN are not separate entities, but reflect the competition of thermalization and recombination, A distinct kink is observed in transient PL in the microsecond range, in the limiting cases of strong tailing and/or low temperatures, indicating the transition from thermalization-limited to (radiative) recombination-limited excess carrier relaxation. Both prediction are in line with experiment, and able to resolve interpretational difficulties. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1637 / 1644
页数:8
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