Short-circuit Failure Mechanism of SiC Double-trench MOSFET

被引：0

作者：

Hu, Dongqing ^{[1
]}

Xia, Tian ^{[1
]}

Zhou, Xintian ^{[1
]}

Jia, Yunpeng ^{[1
]}

Wu, Yu ^{[1
]}

Yin, Shan ^{[2
]}

机构：

[1] Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

[2] China Acad Engn Phys, Inst Elect Engn, Mianyang, Sichuan, Peoples R China

来源：

PROCEEDINGS OF 2020 IEEE 5TH INFORMATION TECHNOLOGY AND MECHATRONICS ENGINEERING CONFERENCE (ITOEC 2020) | 2020年

关键词：

Silicon Carbide double-trench MOSFET; power semiconductor reliability; short-circuit;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The purpose of this paper is to explore the failure mechanism of 650V state-of-the-art SiC double-trench MOSFETs under short-circuit (SC) test. The experimental results demonstrate drain voltage (VDS) has a pronounced influence on the SC capability of the device, and different VDS will lead to discrepant failure mechanisms. The gate-to-source oxide rupture is most likely to occur when a lower VDS is imposed on the studied device. However, the breakdown of the gate-to-source and drain-to-source takes place simultaneously with a higher VDS. And the reason will be discussed in this work.

引用

页码：696 / 699

页数：4

共 50 条

[31] Failure Mechanism Investigations of Type II Short-Circuit in Trench Gate IGBT Device
Tong, Xin
Xu, Zhiyuan
Liu, Siyang
Wu, Wangran
Sun, Weifeng
Yang, Zhuo
Li, Shaohong
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 670 - 672
[32] Electrothermal Power Cycling to Failure of Discrete Planar, Symmetrical Double-Trench and Asymmetrical Trench SiC MOSFETs
Yang, Juefei
Jahdi, Saeed
Yu, Renze
Stark, Bernard
IEEE OPEN JOURNAL OF POWER ELECTRONICS, 2023, 4 : 887 - 899
[33] An In-Depth Investigation Into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs
Li, Xuan
Wu, Yifan
Qi, Zhao
Fu, Zhen
Chen, Yanning
Zhang, Wenmin
Zhang, Quan
Zhao, Hanqing
Deng, Xiaochuan
Zhang, Bo
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (12) : 15576 - 15583
[34] A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness
Jiang, Chongyu
Xu, Hongyi
Ren, Na
Guo, Qing
Sheng, Kuang
2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021), 2021, : 440 - 443
[35] Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions
Zou, Yuan
Wang, Jue
Xu, Hongyi
Wang, Hengyu
MATERIALS, 2022, 15 (02)
[36] An Adjustable P-Region Potential SiC Trench MOSFET With Improved High-Frequency and Short-Circuit Performance
Sun, Ruizhe
Deng, Xiaochuan
Li, Xu
Li, Xuan
Wu, Hao
Wen, Yi
Chen, Wanjun
Zhang, Bo
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (12) : 6492 - 6497
[37] A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness
Zuo, Xinxin
Lu, Jiang
Liu, Xinyu
Bai, Yun
Tian, Xiaoli
Cheng, Guodong
Tang, Yidan
Yang, Chengyue
Chen, Hong
ELECTRONICS, 2022, 11 (07)
[38] Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET
Yang, Juefei
Jahdi, Saeed
Stark, Bernard
Wu, Ruizhu
Alatise, Olayiwola
Gonzalez, Jose Ortiz
IECON 2021 - 47TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, 2021,
[39] A Temperature-dependent PSpice Short-circuit Model of SiC MOSFET
Zhao, Xingran
Li, Hong
Wang, Yuting
Zhou, Zhe
Sun, Kai
Zhao, Zhengming
2019 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2019), 2019,
[40] SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-low Power Loss and Improved Short-Circuit Capability
Jinping ZHANG
Qinglin WU
Zixun CHEN
Hua ZOU
Bo ZHANG
Chinese Journal of Electronics, 2024, 33 (05) : 1127 - 1136

← 1 2 3 4 5 →