Tunneling source-body contact for partially-depleted SOI MOSFET

被引：3
|
作者：
Chen, VMC
Woo, JCS
机构：
[1] Department of Electrical Engineering, University of California, Los Angeles
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 07期
关键词：
D O I：
10.1109/16.595943
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a novel self-aligned asymmetric source-body contact is proposed based on the tunneling effect. The fabrication is relatively simple with only one extra angle implant step. Test structures have been fabricated and good electrical results were obtained. The improvements of this new approach in both device performance and manufacturing compared to fully-depleted SOI MOSFET's will be discussed.
引用
收藏
页码：1143 / 1147
页数：5
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