Numerical simulation of the flow field and concentration distribution in the bulk growth of silicon carbide crystals

被引：10
|
作者：
Lu, Jing [1 ]
Zhang, Zi-Bing [1 ]
Chen, Qi-Sheng [1 ]
机构：
[1] Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 292卷 / 02期
基金：
中国国家自然科学基金;
关键词：
computer simulation; growth model; mass transfer; growth from vapor; seed crystals; semiconducting silicon compounds;
D O I：
10.1016/j.jcrysgro.2006.04.067
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：519 / 522
页数：4
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