High-pressure study of deep emission band at GaAs/partially ordered GaInP interface

We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressures up to similar to 5 GPa, and investigated the characteristics of the 1.46 eV deep emission band. It has a very long decay time of 200-400 ns. Tn addition, unlike the emission from the GaAs well, a strong blueshift of the spectral position with excitation intensity is observed. With increasing pressure, the deep emission shows a sublinear shift towards higher energy, while the GaAs well exhibits a linear shift. The pressure-dependent PL behavior at lower excitation intensity is rather similar to those observed for partially ordered GaInP alloys. These results suggest that the presence of ordered GaInP layers plays an important role in the radiative recombination at 1.46 eV, and the 1.46 eV deep emission is related to the interface transitions of electrons and holes localized at the heterointerface. (C) 2000 Elsevier Science B.V. All rights reserved.