Accurate simulation of phase noise in RF MEMS VCOS

被引：0

作者：

Behera, M ^{[1
]}

Kratyuk, V ^{[1
]}

Hu, Y ^{[1
]}

Mayaram, V ^{[1
]}

机构：

[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA

来源：

2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 3, PROCEEDINGS | 2004年

关键词：

coupled circuit and device simulation; electrostatic/mechanical simulator; MEMS capacitor; MEMS VCO; phase noise; RF VCO; circuit simulation; noise simulation;

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

A coupled circuit and device simulator is presented for the accurate simulation of phase noise in RF MEMS VCOs. The numerical solution of device level equations is used to accurately compute the capacitance of a MEMS capacitor. This coupled with a circuit simulator facilitates the simulation of circuits incorporating MEMS capacitors. In addition, the noise from the MEMS capacitor is combined with a nonlinear circuit-level noise analysis to determine the phase noise of the RF MEMS VCO. Simulations of an 800 MHz MEMS VCO implemented in a HP 0.8 mum CMOS technology show good agreement with experimentally observed behavior.

引用

页码：677 / 680

页数：4

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