Enhanced light extraction in n-GaN-based light-emitting diodes with three-dimensional semi-spherical structure

被引：19

作者：

Yin, Hong-Xing ^{[1
]}

Zhu, Chuan-Rui ^{[1
]}

Shen, Yan ^{[2
]}

Yang, Hai-Fang ^{[1
]}

Liu, Zhe ^{[1
]}

Gu, Chang-Zhi ^{[1
]}

Liu, Bao-Li ^{[1
]}

Xu, Xian-Gang ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 06期

基金：

中国国家自然科学基金;

关键词：

EFFICIENCY; FABRICATION; NANOSTRUCTURES;

D O I：

10.1063/1.4865417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Three-dimensional (3D) periodic micro/nanostructures can have a remarkable enhancement effect on light-emitting diodes (LEDs). However, simple, high-throughput and large-area fabrication of 3D periodic micro/nanostructures with a high duty ratio is difficult. In this Letter, high-duty-ratio 3D semi-spherical structures were fabricated on the surface of n-GaN-based vertical-structure LEDs by under-exposure ultraviolet lithography and dry etching. The resulting LEDs provide about 200% more light output power than those with a flat surface. This method of fabricating high-duty-ratio 3D semi-spherical structures could be used in other optical devices and shows potential for industrial production and commercialization. (C) 2014 AIP Publishing LLC.

引用

页数：3

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