Ga-doped ZnO as an electron transport layer for PffBT4T-20D: PC70BM organic solar cells

被引：24

作者：

Sharma, Ramakant ^{[1
,2
]}

Lee, Hyunwoo ^{[2
]}

Borse, Kunal ^{[1
]}

Gupta, Vinay ^{[3
]}

Joshi, Amish G. ^{[3
]}

Yoo, Seunghyup ^{[2
]}

Gupta, Dipti ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Met Engn & Mat Sci, PEEL, Bombay 400076, Maharashtra, India

[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Daejeon 305701, South Korea

[3] CSIR, Natl Phys Lab, New Delhi 110012, India

来源：

ORGANIC ELECTRONICS | 2017年 / 43卷

关键词：

Organic solar cells; PffBT4T-20D:PC70BM; Ga-doped ZnO; Electron transport layers; Hole blocking layer; POLYMER PHOTOVOLTAIC CELLS; HIGH-PERFORMANCE; HIGH-EFFICIENCY; THIN-FILMS; EXCEEDING; 10-PERCENT; DESIGN RULES; NANOPARTICLES; PCBM; CATHODE; OXIDE;

D O I：

10.1016/j.orgel.2017.01.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ga-doped ZnO(GZO) is investigated as an electron transport layer in organic solar cells based on a promising donor: acceptor system of polyl(5,6-difluoro-2,1,3-benzothiadiazo1-4,7-diy1)-alt-(3,3"'-di(2-octyldode-cyl)-2,2'; 5',2";-5",2"'-quaterthio-phen-5,5"'-diyI)I (PffBT4T-20D):phenyl-C71-butyric acid methyl ester (PC70BM). With the inverted geometry having a configuration of ITO/GZO (40 nm)/13ffBT4T20D:PC70BM (270 nm)/MoO3 (20 nm)/AI (100 nm), maximum power conversion efficiency (PCE) of 9.74% has been achieved, while it is limited at 8.72% for devices with undoped ZnO. Our study based on the structural, morphological, compositional, and electrical characterizations indicate that suggests enhanced device performance of the GZO-based devices resulted mainly from the improved electrical properties of Ga-ZnO thin films as compared to undoped ZnO. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：207 / 213

页数：7

共 46 条

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