Transparence and electrical properties of ZnO-based multilayer electrode

被引:6
|
作者
Kao, Kuo-Sheng [1 ]
Chang, Shang-Hao [1 ]
Hsieh, Po-Tsung [2 ]
Wang, Chih-Ming [3 ]
Cheng, Da-Long [1 ]
机构
[1] SHU TE Univ, Dept Comp & Commun, Kaohsiung, Taiwan
[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan, Taiwan
[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung, Taiwan
来源
关键词
OPTICAL-PROPERTIES; ITO MULTILAYERS; FILMS; TEMPERATURE; DEPENDENCE; OXIDE; CONDUCTIVITY; DEPOSITION; RESISTANCE; SUBSTRATE;
D O I
10.1007/s00339-009-5237-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Three-layered ZnO/Ag-Ti/ZnO structures were prepared using both the sol-gel technique and DC magnetron sputtering. This study focuses on the electrical and optical properties of the ZnO/Ag-Ti/ZnO multilayers with various thicknesses of the Ag-Ti layer. The ZnO thin film prepared by the sol-gel method was dried at 300A degrees C for 3 minutes, and a fixed thickness of 20 nm was obtained. The thickness of the Ag-Ti thin film was controlled by varying the sputtering time. The Ag-Ti layer substantially reduced the electrical resistivity of the sol-gel-sprayed ZnO thin films. The sheet resistance of the Ag-Ti layer decreased dramatically and then became steady beyond a sputtering time of 60 s. The sputtering time of Ag-Ti thin film deposition was determined to be 60 s, taking into account the optical transmittance. Consequently, the transmittance of the ZnO/Ag-Ti/ZnO multilayer films was 71% at 550 nm and 60% at 350 nm. The sheet resistance was 4.2 Omega/sq.
引用
收藏
页码:529 / 533
页数:5
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