Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/GaN HFET

被引：4

作者：

Kim, Minki ^{[1
]}

Park, Youngrak ^{[1
]}

Park, Junbo ^{[1
]}

Jung, Dong Yun ^{[1
]}

Jun, Chi-Hoon ^{[1
]}

Ko, Sang Choon ^{[1
]}

机构：

[1] ETRI, ICT Mat & Components Res Lab, Daejeon, South Korea

来源：

ETRI JOURNAL | 2017年 / 39卷 / 02期

关键词：

GaN-FET; Dynamic resistance; CURRENT COLLAPSE; HEMTS; TRANSISTORS; RESISTANCE;

D O I：

10.4218/etrij.17.0116.0385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose pulse-mode dynamic Ron measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zerovoltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic R-on of the fabricated AlGaN /GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from 0.1 mu s to 100 ms, the dynamic R-on decreased from 160 Omega to 2 Omega. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.

引用

页码：292 / 299

页数：8

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