Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/GaN HFET

被引：4
|
作者：
Kim, Minki [1 ]
Park, Youngrak [1 ]
Park, Junbo [1 ]
Jung, Dong Yun [1 ]
Jun, Chi-Hoon [1 ]
Ko, Sang Choon [1 ]
机构：
[1] ETRI, ICT Mat & Components Res Lab, Daejeon, South Korea
来源：
ETRI JOURNAL | 2017年 / 39卷 / 02期
关键词：
GaN-FET; Dynamic resistance; CURRENT COLLAPSE; HEMTS; TRANSISTORS; RESISTANCE;
D O I：
10.4218/etrij.17.0116.0385
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose pulse-mode dynamic Ron measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zerovoltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic R-on of the fabricated AlGaN /GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from 0.1 mu s to 100 ms, the dynamic R-on decreased from 160 Omega to 2 Omega. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.
引用
收藏
页码：292 / 299
页数：8
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