Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs.

被引：0

作者：

Pougeoise, E. ^{[1
]}

Gilet, Ph. ^{[1
]}

Grosse, Ph. ^{[1
]}

Poncet, S. ^{[1
]}

Chelnokov, A. ^{[1
]}

Gerard, J-M. ^{[2
]}

Bourgeois, G. ^{[3
]}

Stevens, R. ^{[3
]}

Hamelin, R. ^{[3
]}

Hammar, M. ^{[4
]}

Berggren, J. ^{[4
]}

Sundgren, P. ^{[4
]}

Vilain, Sbastien ^{[5
]}

Bouillard, J. -S. ^{[5
]}

Lerondel, G. ^{[5
]}

Bachelot, R. ^{[5
]}

Royer, P. ^{[5
]}

机构：

[1] CEA, LETI, 17 Rue Martyrs, F-38000 Grenoble, France

[2] CEA, DRFMC, F-38000 Grenoble, France

[3] Intexys Photon, F-38000 Grenoble, France

[4] KTH, Dept Microelect & Informat Technol, S-16440 Kista, Sweden

[5] Univ Technol Troyes, CNRS FRE 2671, Lab Nanotechnol & Instrumentat Opt, F-10010 Troyes, France

来源：

MICRO-OPTICS, VCSELS, AND PHOTONIC INTERCONNECTS II: FABRICATION, PACKAGING, AND INTEGRATION | 2006年 / 6185卷

关键词：

optical interconnections; long-wavelength vertical-cavity surface-emitting lasers; strained InGaAs quantum well;

D O I：

10.1117/12.662118

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 mu m oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.

引用

页数：9

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