Interface pinning in columnar defects

被引:0
|
作者
Kim, JM [1 ]
Lee, C
机构
[1] Soongsil Univ, Dept Phys, Tokyo 156743, Japan
[2] Soongsil Univ, Comp Aided Mol Design Res Ctr, Tokyo 156743, Japan
关键词
absorbing transition; pinning depinning transition; surface roughness; quenched noise; Kardar-Parisi-Zhang equation;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The interface pinning-depinning transition in a simple growth model for columnar random media is studied in connection with the absorbing state. In our model, the velocity v of the average surface height for various system sizes L follows a scaling relation v(L) similar to L(-betav/vx)g(t/L-zv) at the critical driving force F-c, where v(x), beta(v), and z(v) are the correlation length exponent, the velocity exponent, and the dynamic critical exponent, respectively. We find v(x) approximate to 1.0, z(v) approximate to 2.0, and beta(v) approximate to 1.0. The connection between the surface width exponents and the absorbing phase exponents are discussed.
引用
收藏
页码:23 / 26
页数:4
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