共 50 条
- [41] THE GAMMA-IRRADIATION EFFECT ON DEFECTS IN ANTHRACENE-CRYSTALS UKRAINSKII FIZICHESKII ZHURNAL, 1980, 25 (02): : 325 - 327
- [42] LOW-TEMPERATURE ANNEALING OF NEUTRON AND GAMMA-INDUCED DEFECTS IN KBR BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (02): : 179 - &
- [43] INFLUENCE OF TEMPERATURE ON THE EFFICIENCY OF ANNIHILATION OF PRIMARY RADIATION DEFECTS IN HIGH-RESISTIVITY SILICON SUBJECTED TO GAMMA-IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (05): : 541 - 543
- [44] Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing Semiconductors, 1997, 31 : 189 - 193
- [46] ANNEALING OF RADIATION DEFECTS BY LASER RADIATION PULSES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 946 - 946
- [47] INFLUENCE OF TYPE OF GROUP V DOPANT ON ANNEALING OF GAMMA-RADIATION DEFECTS IN GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1229 - 1230
- [48] EFFECT OF IRRADIATION TEMPERATURE ON THE RADIATION EXPANSION OF QUARTZ SOVIET ATOMIC ENERGY, 1981, 51 (03): : 593 - 595
- [49] EFFECT OF TEMPERATURE ON HYPERFINE STRUCTURE OF GAMMA RADIATION SOVIET PHYSICS JETP-USSR, 1961, 13 (05): : 1068 - 1070