Changes in molecular weight distribution caused by main-chain scission of electron beam resists

被引：4
|
作者：
Kozawa, Takahiro [1 ]
Nakajima, Ayako [1 ]
Hoshino, Manabu [2 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
[2] Zeon Corp, Kawasaki, Kanagawa 2109507, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 12期
关键词：
electron beam lithography; resist; main chain scission; molecular weight distribution; simulation; POLY(METHYL METHACRYLATE); CHEMICAL AMPLIFICATION; ACID DIFFUSION; FABRICATION; LITHOGRAPHY; DEGRADATION; RADIOLYSIS; RESOLUTION; DEVELOPER; LINES;
D O I：
10.35848/1347-4065/abcc12
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Main-chain-scission-type resists have attracted much attention as the next-generation electron beam (EB) resist used for photomask fabrication. In this study, the gel permeation chromatography (GPC) charts of irradiated EB resists (ZEP series of ZEON) were analyzed by simulation to clarify the changes in the molecular weight distribution caused by the main-chain scission of a resist polymer. In the low-exposure-dose region, the molecular weight distribution obtained by GPC was well reproduced by the simulation using a random-scission model. In the high-exposure-dose region, the calculated molecular weight distribution deviated from the experimental one because of crosslinking and the generation of stable components.
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页数：5
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