Single-Shot Readout of Singlet-Triplet Qubit States in a Si/SiGe Double Quantum Dot

被引：0

作者：

Prance, Jon R. ^{[1
]}

Shi, Zhan ^{[1
]}

Simmons, C. B. ^{[1
]}

Savage, D. E. ^{[1
]}

Lagally, M. G. ^{[1
]}

Schreiber, L. R. ^{[2
]}

Vandersypen, L. M. K. ^{[2
]}

Friesen, Mark ^{[1
]}

Joynt, Robert ^{[1
]}

Coppersmith, S. N. ^{[1
]}

Eriksson, M. A. ^{[1
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

基金：

欧洲研究理事会;

关键词：

SPIN BLOCKADE; SILICON;

D O I：

10.1149/05009.0655ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The spin singlet and triplet states of a two-electron double quantum dot can be used to form a logical qubit that combines fast manipulation and a spin readout mechanism. We demonstrate single-shot readout of the two-electron states of a Si/SiGe double quantum dot using a quantum-point-contact charge sensor and spin-to-charge conversion. From the statistics of multiple single-shot measurements, we find the lifetimes of the spin states as a function of in-plane magnetic field. The lifetimes of the singlet and T-0 triplet are both similar to 10ms and insensitive to magnetic field. The T-triplet lifetime increases with magnetic field, reaching similar to 3s at 1T.

引用

页码：655 / 662

页数：8

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