Tunable resonant tunneling through a system of capacitively coupled double quantum dots

被引：1

作者：

Yuan, R. Y. ^{[1
,2
]}

Wang, R. Z. ^{[1
]}

Yan, H. ^{[1
]}

机构：

[1] Beijing Univ Technol, Lab Thin Film Mat, Coll Mat Sci & Engn, Beijing 100022, Peoples R China

[2] Capital Normal Univ, Dept Phys, Beijing 100048, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Resonant tunneling; Capacitively coupling; Double quantum dots; ELECTRON-TRANSPORT; CONDUCTANCE;

D O I：

10.1016/j.physe.2008.10.012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the tunable resonant tunneling through a system of capacitively coupled double quantum dots (CDQDs) in series with interdot tunneling. According to the linear regime, it is found that the presence of the interdot Coulomb repulsion destroys the symmetry of the two groups of conductance peaks located around resonant states. Moreover, it also shows that the influence of the interdot interaction on the resonant tunneling in the weaker tunneling coupling case is obviously different from that in the stronger tunneling coupling case. These results indicate that the coexistence of quantum and classical effects present novel properties for electron resonant tunneling the CDQD system. In addition, for the asymmetric capacitively CDQDs, the effect of the interdot capacitive and tunneling coupling on the resonant tunneling is also discussed in detail. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：558 / 563

页数：6

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