Thickness measurements of ultra-thin films using AFM

被引：0
|
作者：
Kim, TH [1 ]
Kwon, HI [1 ]
Lee, JD [1 ]
Park, BG [1 ]
机构：
[1] Seoul Natl Univ, Sch EE, Kwanak Gu, Seoul 151742, South Korea
来源：
MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we propose a new method that can measure the thickness of thin films regardless of the kinds of samples using AFM (Atomic Force Microscopy). The characteristics of AFM lead to the ability to measure the thickness of thin films regardless of the kinds and the conductivity of the samples. To verify the usefulness of this method, the thickness of SiO2 grown on Si was determined. We compared the thickness value determined using this method with TEM (Transmission Electron Microscopy) data. We obtained the reasonable thickness data between 20 and 40 Angstrom comparing with TEM data. In addition, using our method, we studied the influence of chemical oxide generated during H2SO4 PR strip on determining the thickness of the SiO2 films.
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收藏
页码：240 / 241
页数：2
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