MOCVD growth of porous cerium oxide thin films on silicon substrate

被引：12
|
作者：
Avril, L. [1 ]
Zanfoni, N. [1 ]
Simon, P. [1 ]
Imhoff, L. [1 ]
Bourgeois, S. [1 ]
Domenichini, B. [1 ]
机构：
[1] Univ Bourgogne, CNRS, UMR 6303, Lab ICB, F-21078 Dijon, France
来源：
SURFACE & COATINGS TECHNOLOGY | 2015年 / 280卷
关键词：
Porous CeO2; DLI-MOCVD; Microstructure; XPS; CHEMICAL-VAPOR-DEPOSITION; ALKOXIDE PRECURSOR; CEO2; SPECTROSCOPY; SURFACES; PHOTOELECTRON; PHOTOEMISSION; REDUCTION; CATALYSTS;
D O I：
10.1016/j.surfcoat.2015.07.055
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Porous cerium oxide thin films were grown by pulsed direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD) on silicon substrate, using cerium tetrakis (1-methoxy-2-methyl-2-propanolate) dissolved in cyclohexane as precursor as well as oxygen as oxidant agent. The chemical and morphological characteristics of the films were investigated by XPS, SEM and TEM. The influence of the growth conditions on the morphological features of the thin films and the cerium chemical states are reported and discussed. The decrease of the oxygen and/or alkoxide flow rate induces the decrease of both the film thickness and the porosity of the layer. Moreover, the growth of silicate at the interface between the silicon substrate and the grown film is evidenced. (C) 2015 Published by Elsevier B.V.
引用
收藏
页码：148 / 153
页数：6
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