Development of silicon containing resists for sub-100nm lithography

被引：7
|
作者：
Hatakeyama, J [1 ]
Takeda, T [1 ]
Nakashima, M [1 ]
Kinsho, T [1 ]
Kawai, Y [1 ]
Ishihara, T [1 ]
机构：
[1] Shin Etsu Chem Co Ltd, New Funct Mat Res Ctr, Niigata 9428601, Japan
来源：
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2004年 / 17卷 / 04期
关键词：
bilayer resist; SSQ; silicon-containing olefin; alternating copolymer;
D O I：
10.2494/photopolymer.17.519
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
Polysilsesquioxane (SSQ) and alternating-copolymers of silicon containing olefin with maleic anhydride (SiMA) have been employed as backbone polymers of silicon containing bilayer resists. Several kinds of functional alkoxysilanes to form SSQ and silicon containing olefins for SiMA have been synthesized. Fluorinated alcohol as an adhesion unit in SSQ effectively reduces micro swelling in developer. Alternating copolymer structure in SiMA minimizes line edge roughness. Characteristics of oxygen reactive ion etching resistance onto the SSQ and SiMA polymers will be also discussed.
引用
收藏
页码：519 / 525
页数：7
相关论文
共 50 条
  • [1] Rational design in cyclic olefin resists ford sub-100nm lithography
    Li, WJ
    Varanasi, PR
    Lawson, MC
    Kwong, RW
    Chen, KJ
    Ito, H
    Truong, H
    Allen, RD
    Yamamoto, M
    Kobayashi, E
    Slezak, M
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 61 - 69
  • [2] Newly developed alternating-copolymer-based silicon containing resists for sub-100nm pattern fabrication
    Hatakeyama, J
    Takeda, T
    Kinsho, T
    Kawai, Y
    Ishihara, T
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 672 - 681
  • [3] Next generation scanner for sub-100nm lithography
    Fujita, I
    Sakai, F
    Uzawa, S
    OPTICAL MICROLITHOGRAPHY XVI, PTS 1-3, 2003, 5040 : 811 - 821
  • [4] Step and flash imprint lithography for sub-100nm patterning
    Colburn, M
    Grot, A
    Amistoso, M
    Choi, BJ
    Bailey, T
    Ekerdt, J
    Sreenivasan, SV
    Hollenhorst, S
    Willson, CG
    EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 : 453 - 457
  • [5] Methods to achieve sub-100nm contact hole lithography
    Lindsay, T
    Kavanagh, R
    Pohlers, G
    Kanno, T
    Bae, Y
    Barclay, G
    Kanagasabapathy, S
    Mattia, J
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 705 - 712
  • [6] Sub-100nm and deep sub-100nm MOS transistor gate patterning
    Xiang, Q
    Gupta, S
    Spence, C
    Singh, B
    Yeap, GCF
    Lin, MR
    MICROELECTRONIC DEVICE TECHNOLOGY II, 1998, 3506 : 243 - 252
  • [7] Application of VEMA type ArF resist to sub-100nm lithography
    Kim, HW
    Lee, S
    Choi, SJ
    Woo, SG
    Chae, YS
    Kim, JS
    Moon, JT
    Kavanagh, R
    Barclay, G
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2002, 15 (03) : 529 - 534
  • [8] Novel high performance ArF resist for sub-100nm lithography
    Lee, G
    Koh, CW
    Jung, JC
    Jung, MH
    Kong, KK
    Kim, JS
    Shin, KS
    Choi, SJ
    Kim, YS
    Choi, YJ
    Kim, DB
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 150 - 158
  • [9] Spectroscopic CD metrology for sub-100nm lithography process control
    Mieher, WD
    Dziura, TG
    Chen, XM
    DeCecco, P
    Levy, A
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVI, PTS 1 & 2, 2002, 4689 : 957 - 965
  • [10] Probing the limits of optical lithography: The fabrication of sub-100nm devices with 193nm wavelength lithography
    Cirelli, RA
    Bude, J
    Houlihan, F
    Gabor, A
    Watson, GP
    Weber, GR
    Klemens, FP
    Sweeney, J
    Mansfield, WM
    Nalamasu, O
    MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 87 - 90
12345