Effect of STO seeding on PZT films crystallization

被引：3
|
作者：
Defay, Emmanuel
Wolozan, David
Andre, Bernard
机构：
[1] CEA, LETI, DRT, Silicon Heterogeneous Integrat Div, F-38054 Grenoble, France
[2] CEA, Opt Div, LETI, DRT, F-38054 Grenoble, France
来源：
INTEGRATED FERROELECTRICS | 2006年 / 80卷 / 01期
关键词：
crystallization; PZT; seeding layer; grain size;
D O I：
10.1080/10584580600656635
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study investigates the influence of a STO seeding layer on the crystallization of PZT thin films. It is shown that a reduction in crystallization temperature higher than 100 degrees C can be achieved. STO layers less than 3 nm-thick induce a strong (111) orientation of PZT as observed with TiO2 seeding. This explains the increase of the remnant polarization of the seeded layers. Besides, STO seeding induces a reduction of the grain size.
引用
收藏
页码：115 / 124
页数：10
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