Tunable V-cavity Semiconductor Laser and Modules

被引：0

作者：

He, Jian-Jun ^{[1
]}

Xiong, Xiaohai ^{[1
]}

Meng, Jianjun ^{[1
]}

Zhang, Sen ^{[1
]}

Liao, Xiaolu ^{[1
]}

Zhu, Hongli ^{[1
]}

Wu, Lin ^{[1
]}

Zou, Li ^{[2
]}

Wang, Lei ^{[2
]}

Li, Guoping ^{[2
]}

机构：

[1] Zhejiang Univ, Dept Opt Engn, Ctr Integrated Optoelect, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China

[2] Lightip Technol Hangzhou Co Ltd, Hangzhou 310030, Zhejiang, Peoples R China

来源：

PIERS 2014 GUANGZHOU: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the principle, design, packaging and measurement results of widely tunable V-cavity lasers. By using a novel half-wave coupler, single-mode lasing with high side mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is realized. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks, as well as in portable devices for spectroscopic analysis.

引用

页码：333 / 336

页数：4

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