Raman spectroscopy of GaP/GaNP core/shell nanowires

被引：15

作者：

Dobrovolsky, A. ^{[1
]}

Sukrittanon, S. ^{[2
]}

Kuang, Y. J. ^{[3
]}

Tu, C. W. ^{[4
]}

Chen, W. M. ^{[1
]}

Buyanova, I. A. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Grad Program Mat Sci & Engn, La Jolla, CA 92093 USA

[3] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[4] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 19期

基金：

瑞典研究理事会; 美国国家科学基金会;

关键词：

BAND-GAP; STRUCTURAL-PROPERTIES; PHOTOLUMINESCENCE; POLARIZATION; ALLOYS;

D O I：

10.1063/1.4901446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm(-1) that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio. (C) 2014 AIP Publishing LLC.

引用

页数：5

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