Scanning Tunneling Microscopy and Spectroscopy Study of a Steep Facet Surface on Ge Nanocrystal Grown on Si(111)

被引：2

作者：

Suto, Hirofumi ^{[1
]}

Murata, Yuya ^{[1
]}

Matsumoto, Takashi ^{[1
]}

Enomoto, Yu ^{[1
]}

Morifuji, Masato ^{[1
]}

Honda, Shin-ichi ^{[1
]}

Katayama, Mitsuhiro ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 03期

基金：

日本学术振兴会;

关键词：

ISLANDS;

D O I：

10.1143/APEX.2.035002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The facet surface of a Ge nanocrystal prepared on Si(111) was investigated by scanning tunneling microscopy and spectroscopy (STM/STS) using a metal-coated carbon nanotube tip. Because of the small radius and high aspect ratio of the tip, we observed a steep facet surface in detail. It was revealed that the surface formed a Ge(105) 1x2 structure. STS spectra obtained on the facet surface showed density of states (DOS) originating from the surface and bulk states, which shifted depending on the height. First-principles calculation revealed that the shift arose from the intermixing of Si with Ge. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.035002

引用

页数：3

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