SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF THE SI(111)5X5 SURFACE

被引：35
|
作者：
FEENSTRA, RM
LUTZ, MA
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期
关键词：
D O I：
10.1116/1.585539
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The scanning tunneling microscope is used to study the structural and electronic properties of the 5 x 5 reconstruction on the Si(111) surface. The 5 x 5 structure is formed by annealing 2 x 1 cleaved surfaces. Results are described for temperature-dependent imaging, voltage-dependent imaging, and spectroscopy. The structure of the 5 x 5 surface is found to be consistent with the dimer-adatom-stacking-fault model. From a comparison of neighboring regions of 2 x 1 and 5 x 5 structures, the pi-bonded chain structure for the 2 x 1 surface is also confirmed.
引用
收藏
页码：716 / 720
页数：5
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