Effect of Tb Doping on Structural and Electrical Properties of BiFeO3 Thin Films Prepared by Sol-Gel Technique

被引：20

作者：

Dong, Guohua ^{[1
]}

Tan, Guoqiang ^{[1
]}

Liu, Wenlong ^{[1
]}

Xia, Ao ^{[1
]}

Ren, Huijun ^{[1
]}

机构：

[1] Shaanxi Univ Sci & Technol, Minist Educ, Key Lab Auxiliary Chem & Technol Chem Ind, Xian 710021, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2014年 / 30卷 / 04期

基金：

中国国家自然科学基金;

关键词：

BiFeO3 thin films; Tb doping; Sol-gel method; Ferroelectric properties; FERROELECTRIC PROPERTIES; PHASE-BOUNDARY;

D O I：

10.1016/j.jmst.2013.09.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi1-xTbxFeO3 thin films were prepared on SnO2 (fluorine doped tin oxide) substrates by a sol-gel method. The structural and electrical properties of the BiFeO3 thin films were characterized and tested. The results indicated that the diffraction peak of the Tb-doped BiFeO3 films was shifted towards right as the doping amounts were increased. The structure was transformed from the rhombohedral to tetragonal/orthorhombic phase. The Bi0.89Tb0.11FeO3 thin film showed the well-developed P-E loops, which enhanced remnant polarization (Pr = 88.05 mu C/cm(2)) at room temperature. The dielectric constant and dielectric loss of Bi0.89Tb0.11FeO3 thin film at 100 kHz were 185 and 0.018, respectively. Furthermore, the Bi0.89Tb0.11FeO3 thin film showed a relatively low leakage current density of 2.07 x 10(-5) A/cm(2) at an applied electric field of 150 kV/cm. The X-ray photoelectron spectroscopy (XPS) spectra indicated that the presence of Fe2+ ions in the Bi0.89Tb0.11FeO3 thin film was less than that in the pure BiFeO3.

引用

页码：365 / 370

页数：6

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