Capacitance-voltage study of hydrogenated silicon-oxide-silicon structures fabricated by wafer bonding

被引：0

作者：

Malyutina-Bronskaya, VV ^{[1
]}

Kamaev, GN

机构：

[1] Novosibirsk State Tech Univ, Novosibirsk 630090, Russia

[2] Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

2004 INTERNATIONAL SIBERIAN WORKSHOPS AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, EDM 2004, PROCEEDINGS | 2004年

关键词：

bonding; SOI; interface states; hydrogenation;

D O I：

10.1109/PESC.2004.241043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Here we present the investigations of capacity-voltage characteristics on silicon - oxide - silicon structures, which were obtained by a direct wafer bonding technique before and after hydrogen treatments. It is shown, that after hydrogenations for the bonded Si-SiO2 interface a decreasing of the density of surface states and the traps localized in a relatively narrow energy takes place.

引用

页码：46 / 47

页数：2

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