Characteristics of Schottky diodes on 6H-SiC surfaces after sacrificial anodic oxidation

Sacrificial anodic oxidation was performed for 6H-SiC surfaces in order to remove low crystallinity layer. We used an electrolyte of ethylene glycol, water and KNO3 for the anodic oxidation. The anodic films were etched by HF, and then contact metals were evaporated on the oxidized-etched surfaces. Simultaneously, contact metals were also evaporated on as-received surfaces and thermally oxidized-etched surfaces. The comparison of contacts characteristics on each surface shows that the contacts on the anodically oxidized-etched surface have characteristics similar to those on the thermally oxidized-etched surface.