Microstructural characterization of electro-deposited CdSe thin films

被引：5

作者：

Thanikaikarasan, S. ^{[1
]}

Mahalingam, T. ^{[1
]}

Srikumar, S. R. ^{[2
]}

Kim, Taekyu ^{[3
]}

Kim, Yong Deak ^{[4
]}

Velumani, S. ^{[5
]}

Asomoza, Rene ^{[5
]}

机构：

[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

[2] Kalasalingam Univ, Dept Phys, Krishnankoli 626190, Tamil Nadu, India

[3] Secur Management Inst, Ctr Modeling & Simulation Studies, Seoul 135871, South Korea

[4] Ajou Univ, Dept Elect & Comp Engn, Suwon 443749, South Korea

[5] CINVESTAV, IPN, Dept Elect Engn SEES, Mexico City 07360, DF, Mexico

来源：

ADVANCES IN SEMICONDUCTING MATERIALS | 2009年 / 68卷

关键词：

CdSe thin films; electrodeposition; microstructural parameters; surface morphology; line broadening;

D O I：

10.4028/www.scientific.net/AMR.68.44

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of CdSe were electrodeposited on tin oxide coated conducting glass substrates at various bath temperatures. The deposited films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray diffraction studies revealed that the deposited films are found to be hexagonal structure with preferential orientation along (002) plane. The microstructural parameters such as crystallite size, R.M.S strain, dislocation density, stacking fault probability were calculated using x-ray line profile analysis technique. The variation of microstructural parameters with bath temperature and film thickness were studied and discussed.

引用

页码：44 / +

页数：2

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