Study of gain for SiGeSn/GeSn/SiGeSn multiple quantum well lasers

被引：0
|
作者：
Abernathy, Grey [1 ,2 ]
Zhou, Yiyin [1 ,2 ]
Ojo, Solomon [1 ,2 ]
Miao, Yuanhao [1 ]
Du, Wei [3 ]
Sun, Greg [4 ]
Soref, Richard [4 ]
Liu, Jifeng [5 ]
Zhang, Yong-Hang [6 ,7 ]
Mortazavi, Mansour [8 ]
Li, Baohua [9 ]
Yu, Shui-Qing [1 ]
机构：
[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Microelect Photon Program, Fayetteville, AR 72701 USA
[3] Wilkes Univ, Dept Elect Engn, Wilkes Barre, PA 18766 USA
[4] Univ Massachusetts Boston, Dept Engn, Boston, MA 02125 USA
[5] Dartmouth Coll, Thayer Sch Engn, Hanover, NH 03755 USA
[6] Arizona State Univ, Ctr Photon Innovat, Tempe, AZ 85287 USA
[7] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
[8] Univ Arkansas Pine Bluff, Dept Chem & Phys, Pine Bluff, AR 71601 USA
[9] Arktonics LLC, 1339 South Pinnacle Dr, Fayetteville, AR 72701 USA
来源：
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We studied the design of SiGeSn/GeSn/SiGeSn multiple-quantum-well active regions and the gain threshold needed to achieve lasing. The enhancement of optical confinement factor was demonstrated by introducing a SiGeSn cap. (C) 2020 The Author(s)
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页数：2
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