Quasiparticle Transformation during a Metal-Insulator Transition in Graphene

被引：177

作者：

Bostwick, Aaron ^{[1
]}

McChesney, Jessica L. ^{[1
]}

Emtsev, Konstantin V. ^{[2
]}

Seyller, Thomas ^{[2
]}

Horn, Karsten ^{[3
]}

Kevan, Stephen D. ^{[4
]}

Rotenberg, Eli ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[2] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91058 Erlangen, Germany

[3] Max Planck Gesell, Fritz Haber Inst, Dept Mol Phys, D-14195 Berlin, Germany

[4] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 05期

关键词：

EPITAXIAL GRAPHENE; BANDGAP;

D O I：

10.1103/PhysRevLett.103.056404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Here we show, with simultaneous transport and photoemission measurements, that the graphene-terminated SiC(0001) surface undergoes a metal-insulator transition upon dosing with small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi-liquid behavior and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.

引用

页数：4

共 50 条

[21] Damaging Graphene with Ozone Treatment: A Chemically Tunable Metal-Insulator Transition
Leconte, Nicolas
Moser, Joel
Ordejon, Pablo
Tao, Haihua
Lherbier, Aurelien
Bachtold, Adrian
Alsina, Francesc
Sotomayor Torres, Clivia M.
Charlier, Jean-Christophe
Roche, Stephan
ACS NANO, 2010, 4 (07) : 4033 - 4038
[22] Metal-Insulator Transition in Strained Graphene: A Quantum Monte Carlo Study
Zhang, Lufeng
Ma, Chi
Ma, Tianxing
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (09):
[23] Tunable metal-insulator transition in double-layer graphene heterostructures
Ponomarenko, L. A.
Geim, A. K.
Zhukov, A. A.
Jalil, R.
Morozov, S. V.
Novoselov, K. S.
Grigorieva, I. V.
Hill, E. H.
Cheianov, V. V.
Fal'ko, V. I.
Watanabe, K.
Taniguchi, T.
Gorbachev, R. V.
NATURE PHYSICS, 2011, 7 (12) : 958 - 961
[24] Magnetic field diffusion during a metal-insulator phase transition
Yu. B. Kudasov
Technical Physics, 1998, 43 : 1440 - 1444
[25] Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition
Salev, Pavel
Fratino, Lorenzo
Sasaki, Dayne
Bag, Soumen
Takamura, Yayoi
Rozenberg, Marcelo
Schuller, Ivan K.
PHYSICAL REVIEW B, 2023, 108 (17)
[26] Magnetic field diffusion during a metal-insulator phase transition
Kudasov, YB
TECHNICAL PHYSICS, 1998, 43 (12) : 1440 - 1444
[27] METAL-INSULATOR TRANSITION IN EXTRINSIC SEMICONDUCTORS
MOTT, NF
ADVANCES IN PHYSICS, 1972, 21 (94) : 785 - 823
[28] Quantum criticality at the metal-insulator transition
Schmeltzer, D
PHYSICAL REVIEW B, 2001, 63 (07)
[29] The metal-insulator transition in the Hubbard model
Zacher, MG
Dorneich, A
Gröber, C
Eder, R
Hanke, W
HIGH PERFORMANCE COMPUTING IN SCIENCE AND ENGINEERING '99, 2000, : 130 - 148
[30] Critical fidelity at the metal-insulator transition
ng, Gim Se Ng
Bodyfelt, Joshua
Kottos, Tsampikos
PHYSICAL REVIEW LETTERS, 2006, 97 (25)

← 1 2 3 4 5 →