Effects of size quantization in the spectra and Γ - M transitions in (GaAs)m(AlAs)n(001) superlattices

被引:1
|
作者
Grinyaev, S. N. [1 ,3 ]
Nikitina, L. N. [1 ]
Tyuterev, V. G. [2 ]
机构
[1] Tomsk Polytech Univ, Lenin St 30, Tomsk, Russia
[2] Tomsk State Pedag Univ, Kievskaia St 60, Tomsk, Russia
[3] Tomsk State Univ, Lenin St 36, Tomsk, Russia
关键词
Electron-phonon interaction; Intervalley transitions; Binary superlattices; INTERVALLEY ELECTRON-SCATTERING; GAAS/ALAS SUPERLATTICES; RAMAN-SCATTERING; PHONONS; ALAS;
D O I
10.1016/j.physe.2018.05.034
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Based on the pseudopotential method and the phenomenological model of coupling forces, electron scattering by short-wavelength phonons in the conduction band of superlattices (GaAs)(m)(AlAs)(n) with thin layers (n, m <= 10) is studied. Intervalley deformation potentials for transitions between the lower states of the Gamma and M valleys of superlattices, which are analogs of the sphalerite transitions of Gamma - X and X - X, are calculated. The intensity of the Gamma - M transitions is determined mainly by the longitudinal optical vibrations of the Al atoms and depends strongly on the mixing of the states T and X. The capture of phonons and electrons in AlAs layers leads to an increase in the deformation potentials of X - X transitions.
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页码:180 / 187
页数:8
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