Simple circuit model of SiC pin diode composed by using experimental electrical characteristics

被引：0
|
作者：
Asano, Katsunori [1 ]
Funaki, Tsuyoshi
Sugawara, Yoshitaka
Hikihara, Takashi
机构：
[1] Kyoto Univ, Dept Elect Engn, Grad Sch Engn, Kyoto 6158510, Japan
[2] Kansai Elect Power Co, Power Engn R&D Ctr, Amagasaki, Hyogo 6610974, Japan
来源：
IEICE ELECTRONICS EXPRESS | 2005年 / 2卷 / 13期
关键词：
SiC; pin diode; circuit model; forward characteristics; recovery characteristics;
D O I：
10.1587/elex.2.392
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, new simple circuit models for developed SiC pin diodes are proposed. They are based on the electrical characteristics obtained in experiments without any detail information of internal structure and physical parameters. The validity of the circuit models is confirmed by correspondence between simulated characteristics and experimental one. The model installed in the experimental circuit configuration can precisely simulate the waveforms of the reverse recovery current and the forward characteristics. As a result, the proposed model is shown to be appropriate for describing the characteristics of high capability SiC diode module in the circuit operation.
引用
收藏
页码：392 / 398
页数：7
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