Study on Electrical Properties of HfTiON and HfTiO Gate Dielectric Ge MOS Capacitors with Wet-NO Surface Pretreatment

被引：0
|
作者：
Zou, Xiao [1 ]
Xu, Jing-Ping [2 ]
机构：
[1] Jianghan Univ, Sch Electromachine & Architecture Engn, Wuhan 430056, Peoples R China
[2] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
来源：
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reactive co-sputtering is employed to prepare HfTiO/GeOxNy and HfTiON/GeOxNy stack gate dielectrics by using wet NO or N2O surface pretreatment. The experimental results show that the wet NO pretreatment can lead to excellent interface properties, gate leakage properties and device reliability, especially for HfTiON/GeOxNy stack gate dielectrics. The involved mechanisms lie in N-barrier role and suitable N incorporation in GeOxNy interlayer, effectively preventing further increase of GeOxNy interlayer and the growth of unstable GeOx during subsequent processing.
引用
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页码：1272 / +
页数：2
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