Modeling the deflection of relativistic electrons in a bent silicon crystal

被引：1

作者：

Koshcheev, V. P. ^{[1
]}

Shtanov, Yu. N. ^{[2
]}

Morgun, D. A. ^{[3
]}

Panina, T. A. ^{[3
]}

机构：

[1] Natl Res Univ MAI, Strela Branch, Moscow Aviat Inst, Moscow 140180, Moscow Oblast, Russia

[2] Branch Tyumen State Oil & Gas Univ, Surgut Oil & Gas Inst, Tyumen 628404, Tyumen Oblast, Russia

[3] Surgut State Univ, Tyumen 628400, Tyumen Oblast, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2015年 / 41卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

Technical Physic Letter; Relativistic Electron; Atomic Diffusion; Atomic Chain; Channeling;

D O I：

10.1134/S1063785015100089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deflection of electrons with energies 855 MeV and 6.3 GeV in planar (111) channels of a bent silicon crystal has been numerically simulated using a TROPICS computer code with atomic diffusion coefficient constructed in the Doyle-Turner approximation of the isolated atom potential. It is established that the atomic diffusion coefficient tends to a minimum value in the region of maximum nuclear density of atomic chain, where the Kitagawa-Ohtsuki diffusion coefficient reaches a maximum value.

引用

页码：946 / 949

页数：4

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