In this paper, we report on a continuous-flow microreactor process to prepare ZnO quantum dots (QDs) with widely tunable particle size and photoluminescence emission wavelengths. X-ray diffraction, electron diffraction, UV-vis, photoluminescence and transmission electron microscopy measurements were used to characterize the synthesized ZnO QDs. By varying operating conditions (temperature, flow rate) or the capping ligand, ZnO QDs with diameters ranging from 3.6 to 5.2 nm and fluorescence maxima from 500 to 560 nm were prepared. Results obtained show that low reaction temperatures (20 or 35 degrees C), high flow rates and the use of propionic acid as a stabilizing agent are favorable for the production of ZnO QDs with high photoluminescence quantum yields (up to 30%).
机构:Seoul Natl Univ, Interdisciplinary Program Nanosci & Technol, Seoul 151744, South Korea
Choi, SH
Song, HJ
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机构:Seoul Natl Univ, Interdisciplinary Program Nanosci & Technol, Seoul 151744, South Korea
Song, HJ
Park, IK
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机构:Seoul Natl Univ, Interdisciplinary Program Nanosci & Technol, Seoul 151744, South Korea
Park, IK
Yum, JH
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机构:Seoul Natl Univ, Interdisciplinary Program Nanosci & Technol, Seoul 151744, South Korea
Yum, JH
Kim, SS
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机构:Seoul Natl Univ, Interdisciplinary Program Nanosci & Technol, Seoul 151744, South Korea
Kim, SS
Lee, SH
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机构:Seoul Natl Univ, Interdisciplinary Program Nanosci & Technol, Seoul 151744, South Korea
Lee, SH
Sung, YE
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Seoul Natl Univ, Interdisciplinary Program Nanosci & Technol, Seoul 151744, South KoreaSeoul Natl Univ, Interdisciplinary Program Nanosci & Technol, Seoul 151744, South Korea
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
He, Kay
Song, Bin
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Song, Bin
Zhan, Lingtong
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhan, Lingtong
Lu, Wangwei
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Lu, Wangwei
Li, Jin
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Li, Jin
Zhao, Gaoling
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhao, Gaoling
Han, Gaorong
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China