Spectroscopic performance improvement of SOI pixel detector for X-ray astronomy by introducing Double-SOI structure

被引：8

作者：

Takeda, A. ^{[1
]}

Mori, K. ^{[1
]}

Nishioka, Y. ^{[1
]}

Fukuda, K. ^{[1
]}

Yukumoto, M. ^{[1
]}

Hida, T. ^{[1
]}

Tsuru, T. G. ^{[1
]}

Tanaka, T. ^{[2
]}

Uchida, H. ^{[2
]}

Hayashi, H. ^{[2
]}

Harada, S. ^{[2
]}

Okuno, T. ^{[2
]}

Kayama, K. ^{[2
]}

Arai, Y. ^{[3
]}

Kurachi, I ^{[3
]}

Kohmura, T. ^{[4
]}

Hagino, K. ^{[4
]}

Negishi, K. ^{[4
]}

Oono, K. ^{[4
]}

Yarita, K. ^{[4
]}

Matsumura, H. ^{[5
]}

Kawahito, S. ^{[6
]}

Kagawa, K. ^{[6
]}

Yasutomi, K. ^{[6
]}

Shrestha, S. ^{[6
]}

Nakanishi, S. ^{[6
]}

Kamehama, H. ^{[7
]}

机构：

[1] Univ Miyazaki, Fac Engn, Dept Appl Phys & Elect Engn, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Miyazaki 8892192, Japan

[2] Kyoto Univ, Fac Sci, Dept Phys, Sakyo Ku, Kitashirakawa Oiwake Cho, Kyoto 6068502, Japan

[3] High Energy Accelerator Res Org KEK, 1-1 Oho, Tsukuba, Ibaraki 3050801, Japan

[4] Tokyo Univ Sci, Sch Sci & Technol, Dept Phys, 2641 Yamazaki, Noda, Chiba 2788510, Japan

[5] Univ Tokyo, Univ Tokyo Inst Adv Study, Kavli Inst Phys & Math Universe WPI, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778583, Japan

[6] Shizuoka Univ, Res Inst Elect, Naka Ku, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan

[7] Okinawa Coll, Natl Inst Technol, Informat & Commun Syst Engn, Henoko 905, Nago, Okinawa 9052127, Japan

来源：

JOURNAL OF INSTRUMENTATION | 2020年 / 15卷 / 11期

基金：

日本学术振兴会;

关键词：

Imaging spectroscopy; X-ray detectors; Space instrumentation; SENSOR;

D O I：

10.1088/1748-0221/15/11/P11001

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper reports the spectroscopic performance improvement of the silicon-on-insulator (SOI) pixel detector for X-ray astronomy, by introducing a double-SOI (D-SOI) structure. For applications in X-ray astronomical observatories, we have been developing a series of monolithic active pixel sensors, named as "XRPIXs," based on SOI pixel technology. The D-SOI structure has an advantage that it can suppress a parasitic capacitance between the sensing node and the circuit layer, due to which the closed-loop gain cannot be increased in our conventional XRPIXs with a single-SOI (S-SOI) structure. Compared to the S-SOI XRPIX, the closed-loop gain is doubled in the D-SOI XRPIX. The readout noise is effectively lowered to 33% (16 e(-) (rms)), and the energy resolution at 6.4 keV is improved by a factor of 1.7 (290 eV in FWHM). The suppression of the parasitic capacitance is also quantitatively evaluated based on the results of capacitance extraction simulation from the layout. This evaluation provides design guidelines for further reduction of the readout noise.

引用

页数：11

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