Crystal growth kinetics in (GeS2)0.2(Sb2S3)0.8 glass

The crystal growth kinetics of Sb2S3 in (GeS2)(0.2)(Sb2S3)(0.8) glass has been studied by DSC and optical microscopy. The linear growth kinetics of Sb2S3 has been observed in the temperature range 525 K < T <= 556 K (E-G = 295 +/- 3 kJ mol(-1)). From the reduced growth rate plot (i.e., growth rate corrected for viscosity) as a function of supercooling it has been found that the most probable mechanism is interface controlled 2D nucleated growth. The DSC data, corresponding to the bulk sample under isothermal and non-isothermal, can be described by the Johnson-Mehl-Avratni equation for the kinetic exponent m congruent to 2. (c) 2006 Elsevier B.V. All rights reserved.