Crystal growth kinetics in (GeS2)0.2(Sb2S3)0.8 glass

被引：12
|
作者：
Svadlak, Daniel
Pustkova, Pavla
Kostal, Petr
Malek, Jiri
机构：
[1] Univ Pardubice, Dept Phys Chem, Pardubice 53210, Czech Republic
[2] Univ Pardubice, Dept Inorgan Technol, Pardubice 53210, Czech Republic
来源：
THERMOCHIMICA ACTA | 2006年 / 446卷 / 1-2期
关键词：
crystal growth; crystallization kinetics; growth rate; viscosity; chalcogenide glass; nucleation-growth model; SB2S3; THIN-FILMS; VISCOSITY;
D O I：
10.1016/j.tca.2006.05.013
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
The crystal growth kinetics of Sb2S3 in (GeS2)(0.2)(Sb2S3)(0.8) glass has been studied by DSC and optical microscopy. The linear growth kinetics of Sb2S3 has been observed in the temperature range 525 K < T <= 556 K (E-G = 295 +/- 3 kJ mol(-1)). From the reduced growth rate plot (i.e., growth rate corrected for viscosity) as a function of supercooling it has been found that the most probable mechanism is interface controlled 2D nucleated growth. The DSC data, corresponding to the bulk sample under isothermal and non-isothermal, can be described by the Johnson-Mehl-Avratni equation for the kinetic exponent m congruent to 2. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：121 / 127
页数：7
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