Study of space charge in gallium nitride by the thermal step method

被引：0

作者：

Matoussi, A. ^{[1
]}

Bergaoui, S.

Boufaden, T.

Guermazi, S.

Mlik, Y.

El jani, B.

Toureille, A.

机构：

[1] Fac Sci Sfax, Lab LaMaCoP Sfax, Sfax, Tunisia

[2] Fac Sci Monastir, Phys Mat Lab, Monastir, Tunisia

[3] Univ Montpellier 2, Electrotech Lab, F-34000 Montpellier, France

[4] Inst Preparatoire Etud Ingn Sfax, Unite Phys Mat Isolents & Semi Isolents, Sfax, Tunisia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 130卷 / 1-3期

关键词：

thermal step method; thin films; GaN; space charge;

D O I：

10.1016/j.mseb.2006.02.053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper. we report the electric investigation of thin nitride gallium films by the capacitance voltage technique and the thermal step method (TSM). The C-V analysis at 1 MHz of Au/GaN diode reveals MOS behaviour and shows strong capacitance hysteresis. This may be due to the presence of trapped charge in this structure. The space charge dynamics is studied by thermal step method at different applied voltages. The TS currents are reverted from negative ones to positive ones above inversion threshold of +0.2 V. This change corresponds to charge modulation from accumulation to the inversion one, in good agreement with the C-V characteristics. The stored charge in this sample is related to the nature of gallium nitride and to the manufacturing processes. The results confirm the possibility to apply the TSM for the measurement of the space charge in the semiconductor materials. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：89 / 93

页数：5

共 50 条

[11] DETERMINING OF SPACE-CHARGE DENSITIES IN SOLID INSULATING MATERIALS BY THE THERMAL STEP METHOD
TOUREILLE, A
REBOUL, JP
MERLE, P
JOURNAL DE PHYSIQUE III, 1991, 1 (01): : 111 - 123
[12] Space Charge Measurement of Vegetable Oil Filled with BN Nanoparticles by Thermal Step Method
Jiang, J. P.
Du, B. X.
Li, X. L.
Cui, B.
Xu, H.
Fu, Mingli
Hou, Shuai
2016 IEEE INTERNATIONAL CONFERENCE ON DIELECTRICS (ICD), VOLS 1-2, 2016, : 176 - 179
[13] Charge carrier mobility in gallium nitride
Malyk, Orest
DIAMOND AND RELATED MATERIALS, 2012, 23 : 23 - 27
[14] Space charge behaviour of different PEI observed by the coupling of thermal step method and TSDC method.
Vella, N
Toureille, A
IEEE 1997 ANNUAL REPORT - CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA, VOLS I AND II, 1997, : 84 - 87
[15] SPACE-CHARGE-LIMITED CURRENT FLOW IN GALLIUM NITRIDE THIN-FILMS
VESELY, JC
SHATZKES, M
BURKHARDT, PJ
PHYSICAL REVIEW B, 1974, 10 (02) : 582 - 590
[16] Review of Space Charge Measurements in High Voltage DC Extruded Cables by the Thermal Step Method
Castellon, Jerome
Agnel, Serge
Notingher, Petru
IEEE ELECTRICAL INSULATION MAGAZINE, 2017, 33 (04) : 34 - 41
[17] Influence of specs charge on the breakdown of multilayered epoxy: A study by the Thermal Step Method
Malrieu, S
Notingher, P
Pacreau, F
Toureille, A
IEEE 1997 ANNUAL REPORT - CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA, VOLS I AND II, 1997, : 88 - 91
[18] Gallium Nitride: Charge Neutrality Level and Interfaces
V. N. Brudnyi
Russian Physics Journal, 2016, 58 : 1613 - 1618
[19] Gallium Nitride: Charge Neutrality Level and Interfaces
Brudnyi, V. N.
RUSSIAN PHYSICS JOURNAL, 2016, 58 (11) : 1613 - 1618
[20] THERMAL-EXPANSION OF GALLIUM NITRIDE
LESZCZYNSKI, M
SUSKI, T
TEISSEYRE, H
PERLIN, P
GRZEGORY, I
JUN, J
POROWSKI, S
MOUSTAKAS, TD
JOURNAL OF APPLIED PHYSICS, 1994, 76 (08) : 4909 - 4911

← 1 2 3 4 5 →