Observation of bistable resistance memory switching in CuO thin films

被引：46
|
作者：
Kim, C. H. [1 ,2 ]
Jang, Y. H. [1 ,2 ]
Hwang, H. J. [1 ,2 ]
Sun, Z. H. [1 ,2 ]
Moon, H. B. [4 ]
Cho, J. H. [1 ,2 ,3 ]
机构：
[1] Pusan Natl Univ, RCDAMP, Pusan 609735, South Korea
[2] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
[3] Pusan Natl Univ, Dept Phys Educ, Pusan 609735, South Korea
[4] Nextron Corp, Pusan 609735, South Korea
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期
关键词：
atomic force microscopy; copper compounds; electric impedance; electrical conductivity; random-access storage; thin films; NIO FILMS; CU2O;
D O I：
10.1063/1.3098071
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a bistable resistance switching behavior of CuO thin films. To understand the resistance switching mechanism, we have studied impedance spectroscopy and nanoscale electrical property. From the frequency-dependent impedance properties of CuO thin films in high resistance (R(OFF)) and low resistance (R(ON)) states, we infer the formation of conducting paths generated by external bias as a possible origin of the bistable resistance states. In addition, the observation of inhomogeneous conducting path using a conducting atomic force microscope is also consistent with our inference.
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页数：3
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