Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

被引:20
|
作者
Lei, Hao [1 ]
Wang, Meihan [2 ]
Hoshi, Yoichi [3 ]
Uchida, Takayuki [3 ]
Kobayashi, Shinichi [3 ]
Sawada, Yutaka [3 ]
机构
[1] Chinese Acad Sci, Sate Key Lab Corros & Protect, Div Surface Engn Mat, Inst Met Res, Shenyang 110016, Peoples R China
[2] Shenyang Univ, Coll Mech Engn, Shenyang 110044, Peoples R China
[3] Tokyo Polytech Univ, Ctr Hyper Media Res, Atsugi, Kanagawa 2430297, Japan
关键词
Damage to organic layer; Magnetron sputtering (MS); Low voltage sputtering (LVS); Kinetic-energy-control-deposition (KECD); Facing target sputtering (FTS); PL spectra; THIN-FILMS; TRIS-(8-HYDROXYQUINOLINE) ALUMINUM; BOMBARDMENT;
D O I
10.1016/j.apsusc.2013.08.065
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FT S) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:389 / 394
页数:6
相关论文
共 50 条
  • [21] Comparative studies of nonpolar (10-10) ZnO films grown by using atomic layer deposition and radio-frequency magnetron sputtering
    Nak-Jung Choi
    Hyo-Soo Son
    Hyun-Jun Choi
    Kyoung-Kook Kim
    Sung-Nam Lee
    Journal of the Korean Physical Society, 2014, 65 : 417 - 420
  • [22] Characteristics of ITO films deposited on a PET substrate under various deposition conditions
    Jung Rak Lee
    Dong Yeop Lee
    Do Geun Kim
    Gun Hwan Lee
    Yang Do Kim
    Pung Keun Song
    Metals and Materials International, 2008, 14 : 745 - 751
  • [23] Characteristics of ITO Films Deposited on a PET Substrate Under Various Deposition Conditions
    Lee, Jung Rak
    Lee, Dong Yeop
    Kim, Do Geun
    Lee, Gun Hwan
    Kim, Yang Do
    Song, Pung Kenn
    METALS AND MATERIALS INTERNATIONAL, 2008, 14 (06) : 745 - 751
  • [24] Magnetic properties of FeCoC thin films prepared by various sputtering methods
    Edon, V.
    Dubourg, S.
    Vernieres, J.
    Bobo, J. -F.
    JOINT EUROPEAN MAGNETIC SYMPOSIA (JEMS), 2011, 303
  • [25] Studies on the effect of hydrogen doping during deposition of Al:ZnO films using RF magnetron sputtering
    Shantheyanda, Bojanna P.
    Sundaram, Kalpathy B.
    Shiradkar, Narendra S.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2012, 177 (20): : 1777 - 1782
  • [26] Effects of electron irradiation during the growth of ITO films by an using RF sputtering system
    Yoon, Young Joon
    Cho, Sung Hwan
    Kim, Bongho
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 69 (07) : 1236 - 1241
  • [27] Effects of electron irradiation during the growth of ITO films by an using RF sputtering system
    Young Joon Yoon
    Sung Hwan Cho
    Bongho Kim
    Journal of the Korean Physical Society, 2016, 69 : 1236 - 1241
  • [28] Study on deposition method of ITO thin films with large area by electron cyclotron resonance plasma sputtering
    Yasui, T.
    Tahara, H.
    Yoshikawa, T.
    Shinku/Journal of the Vacuum Society of Japan, 2001, 44 (03) : 272 - 275
  • [29] Influence of oxygen in the deposition and annealing atmosphere on the characteristics of ITO thin films prepared by sputtering at room temperature
    Guillén, C
    Herrero, J
    VACUUM, 2006, 80 (06) : 615 - 620
  • [30] Quality enhancement of AZO thin films at various thicknesses by introducing ITO buffer layer
    Mahdiyar Nouri Rezaie
    Negin Manavizadeh
    Ebrahim Nadimi
    Farhad Akbari Boroumand
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 9328 - 9337