An Ultra Low-Voltage, Ultra Low-Power DTMOS-Based CCII Design for Speech Processing Filters

被引：0

作者：

Uygur, Atilla ^{[1
]}

Kutman, Hakan ^{[1
]}

机构：

[1] Dept Elect & Telecommun Engn, TR-34469 Maslak, Turkey

来源：

2013 8TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING (ELECO) | 2013年

关键词：

MOSFET DTMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, an ultra low-voltage, ultra low-power dynamic threshold voltage MOS transistor (DTMOS)-based CCII design has been presented. The proposed circuit operates under +/- 0.2 V symmetric power supply. Consisting of only eight transistors, it consumes only 214 nW power while all transistors are working in the subthreshold region. It has a 570 kHz 3 dB-bandwidth from X terminal to Y terminal for the voltage gain. TSMC 0.18 im process technology is used in the design of CCII block which is then employed in a band-pass filter configuration. In order to further investigate its performance, real speech signals are fed to the filter and close agreement is found between theoretical study and simulated responses.

引用

页码：31 / 35

页数：5

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