Effect of diffusion processes on the contact melting of metallization layers in Si-Si-a (Ge-a)-Al structures

被引：0
|
作者：
Orlov, AM
Kostishko, BM
Skvortsov, AA
机构：
来源：
INORGANIC MATERIALS | 1996年 / 32卷 / 03期
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暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Recrystallization-induced changes in the electronic structure of amorphous silicon were investigated by Auger electron spectroscopy. The mechanism of contact melting in multilayer structures was considered. Switching oscillograms were used for the first time to evaluate the coefficient of multiphase diffusion. The thermal processes induced in metallization layers by pulsed current were studied as a function of the thickness of recrystallized amorphous silicon film.
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页码：246 / 249
页数：4
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