Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition

被引：5

作者：

Hur, M. ^{[1
]}

Kim, D. J. ^{[1
]}

Kang, W. S. ^{[1
]}

Lee, J. O. ^{[1
]}

Song, Y. -H. ^{[1
]}

Kim, S. J. ^{[2
]}

Kim, I. D. ^{[2
]}

机构：

[1] Korea Inst Machinery & Mat, Plasma Engn Lab, 156 Gajeongbuk Ro, Daejeon 305343, South Korea

[2] Korea Inst Machinery & Mat, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 305701, South Korea

来源：

PLASMA CHEMISTRY AND PLASMA PROCESSING | 2016年 / 36卷 / 02期

关键词：

Al2O3; Direct-type; Plasma-enhanced atomic layer deposition; Pressure effect; SiOx; ALUMINUM-OXIDE; OXYGEN PLASMA; ELLIPSOMETRY; SPECTROSCOPY; TEMPERATURE; GROWTH; OZONE;

D O I：

10.1007/s11090-015-9677-y

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

The effect of working pressure on the properties of Al2O3 films was investigated in direct-type plasma-enhanced atomic layer deposition. Increasing pressure yielded a denser Al2O3 film and a thinner SiOx interlayer, but only slightly affected the Al2O3 film thickness. The diffusivity of O atoms was evaluated by using time-averaged emission intensities of the He I and O I lines. The consumption rate of O radicals and the production rate of H radicals, as functions of plasma exposure time, were deduced from analyzing temporal evolutions of emission intensities of the O I and H-alpha lines, respectively. The amounts of C and H impurities in the film were confirmed by using an X-ray photoelectron spectroscopy. Finally, the mechanisms by which the working pressure affected the properties of Al2O3 films were discussed based on the experimental results.

引用

页码：679 / 691

页数：13

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