Hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12

被引：18
|
作者：
Seo, S
Yoon, JG
Kim, JD
Song, TK
Kang, BS
Noh, TW
Lee, YK
Kim, CJ
Lee, IS
Lee, JK
Park, YS
机构：
[1] Seoul Natl Univ, Res Ctr Oxide Elect, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Phys, Seoul 151742, South Korea
[3] Samsung Adv Inst Technol, Microelect Lab, Suwon 440600, South Korea
[4] Univ Suwon, Dept Phys, Kyunggido 445743, South Korea
[5] Changwon Natl Univ, Dept Ceram Sci & Engn, Chang Won 641773, Kyungnam, South Korea
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期
关键词：
D O I：
10.1063/1.1505110
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of forming gas annealing (FGA) were investigated on ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films fabricated by a chemical solution deposition. With the FGA up to 350 degreesC, the Pt/BLT/Pt capacitors showed good ferroelectric characteristics without significant degradation. As the FGA temperature was increased, a decomposition of the BLT powder sample was observed by using thermogravimetric analysis. By comparing the time-dependent weight loss of BLT with that of Bi4Ti3O12 during FGA, La doping was found to significantly impede the decomposition rate. The decomposition, especially in the (Bi2O2)(2+) layers, was discussed as a hydrogen-induced degradation mechanism in the Bi-layered perovskite ferroelectrics. (C) 2002 American Institute of Physics.
引用
收藏
页码：1857 / 1859
页数：3
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