Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters

被引：0

作者：

Lazanu, S. ^{[1
]}

Ciurea, M. L. ^{[1
]}

Lazanu, I. ^{[2
]}

机构：

[1] Natl Inst Mat Phys, Bucharest, Romania

[2] Univ Bucharest, Fac Phys, Bucharest, Romania

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 12期

关键词：

Defects; Silicon detectors; Iisovalent impurities; Radiation field; Radiation damage; POINT-DEFECTS; SILICON DETECTORS; IMPURITIES; GE; IRRADIATION; DIFFUSION; OXYGEN;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The knowledge of the effects of radiation in semiconductor devices, in particular in detectors, represents an important and active field of research. The influence of isovalent impurities, carbon and germanium, on the radiation damage of silicon for detectors is investigated in the frame of a quantitative phenomenological model for defect kinetics, developed previously by the authors. The concentrations of defects induced by irradiation in materials with different doping levels are calculated, as well as the leakage current and effective carrier concentrations in p-n junction detectors made from these materials. The beneficial effect of Ge on the radiation damage of silicon is deduced.

引用

页码：2150 / 2154

页数：5

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