Mechanistic study of precursor evolution in colloidal group II-VI semiconductor nanocrystal synthesis

被引:367
|
作者
Liu, Haitao
Owen, Jonathan S.
Alivisatos, A. Paul [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Dept Chem, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1021/ja0656696
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The molecular mechanism of precursor evolution in the synthesis of colloidal group II-VI semiconductor nanocrystals was studied using H-1, C-13, and P-31 NMR spectroscopy and mass spectrometry. Tri-n-butylphosphine chalcogenides (TBPE; E = S, Se, Te) react with an oleic acid complex of cadmium or zinc (M-OA; M = Zn, Cd) in a noncoordinating solvent (octadecene (ODE), n-nonane-d(20), or n-decane-d(22)), affording ME nanocrystals, tri-n-butylphosphine oxide (TBPO), and oleic acid anhydride ((OA)(2)O). Likewise, the reaction between trialkylphosphine selenide and cadmium n-octadecylphosphonic acid complex (Cd-ODPA) in tri-n-octylphosphine oxide (TOPO) produces CdSe nanocrystals, trialkylphosphine oxide, and anhydrides of n-octadecylphosphonic acid. The disappearance of tri-n-octylphosphine selenide in the presence of Cd-OA and Cd-ODPA can be fit to a single-exponential decay (k(obs) = (1.30 +/- 0.08) x 10(-3) s(-1), Cd-ODPA, 260 degrees C, and k(obs) = (1.51 +/- 0.04) x 10(-3) s(-1), Cd-OA, 117 degrees C). The reaction approaches completion at 70-80% conversion of TOPSe under anhydrous conditions and 100% conversion in the presence of added water. Activation parameters for the reaction between TBPSe and Cd-OA in n-nonane-d(20) were determined from the temperature dependence of the TBPSe decay over the range of 358-400 K (Delta H = 62.0 +/- 2.8 kJ center dot mol(-1), Delta S = -145 +/- 8 J center dot mol(-1)center dot K-1). A reaction mechanism is proposed where trialkylphsophine chalcogenides deoxygenate the oleic acid or phosphonic acid surfactant to generate trialkylphosphine oxide and oleic or phosphonic acid anhydride products. Results from kinetics experiments suggest that cleavage of the phosphorus chalcogenide double bond (TOPE) proceeds by the nucleophilic attack of phosphonate or oleate on a (TOPE)M complex, generating the initial M-E bond.
引用
收藏
页码:305 / 312
页数:8
相关论文
共 50 条
  • [31] Synthesis and optical properties of II-VI semiconductor quantum dots: a review
    Al-Douri, Y.
    Khan, Mohammad Mansoob
    Jennings, James Robert
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (11)
  • [32] LOW-TEMPERATURE SYNTHESIS OF II-VI SEMICONDUCTOR-MATERIALS
    STEIGERWALD, ML
    SPRINKLE, CR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1987, 194 : 146 - INOR
  • [33] SYNTHESIS AND STRUCTURAL CHARACTERIZATION OF II-VI SEMICONDUCTOR NANOCRYSTALLITES (QUANTUM DOTS)
    MURRAY, CB
    NIRMAL, M
    NORRIS, DJ
    BAWENDI, MG
    ZEITSCHRIFT FUR PHYSIK D-ATOMS MOLECULES AND CLUSTERS, 1993, 26 : S231 - S233
  • [34] Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides
    Welna, M.
    Kudrawiec, R.
    Nabetani, Y.
    Tanaka, T.
    Jaquez, M.
    Dubon, O. D.
    Yu, K. M.
    Walukiewicz, W.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (08)
  • [35] Magic-size semiconductor nanoclusters in the (II-VI)13 and (II-VI)34 families
    Zhou, Yang
    Wang, Yuanyuan
    Wang, Fudong
    Buhro, William
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2016, 252
  • [36] Coupled electromechanical effects in II-VI group finite length semiconductor nanowires
    Patil, Sunil R.
    Melnik, Roderick V. N.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (14)
  • [37] Intracenter transitions of iron-group ions in II-VI semiconductor matrices
    Agekyan, VF
    PHYSICS OF THE SOLID STATE, 2002, 44 (11) : 2013 - 2030
  • [38] Phonons on II-VI (110) semiconductor surfaces
    Tütüncü, HM
    Miotto, R
    Srivastava, GP
    PHYSICAL REVIEW B, 2000, 62 (23): : 15797 - 15805
  • [39] Novel ferroelectricity in II-VI semiconductor ZnO
    Onodera, A
    FERROELECTRICS, 2002, 267 : 131 - 137
  • [40] Beryllium containing II-VI semiconductor devices
    Waag, A
    Fischer, F
    Lugauer, HJ
    Schull, K
    Zehnder, U
    Gerhard, T
    Keim, M
    Reuscher, G
    Landwehr, G
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2, 1998, 3283 : 30 - 38