The Structural, Electrical and Optical Properties of GZO/Ni Bi-layered Films

被引：3
|
作者：
Gong, Tae-Kyung [1 ]
Jeon, Jae-Hyun [1 ]
Heo, Sung-Bo [1 ,2 ]
Cha, Byung-Chul [2 ]
Kim, Jun-Ho [2 ]
Jung, Uoo-Chang [2 ]
Park, Soon [1 ]
Kong, Young-Min [1 ]
Kim, Daeil [1 ]
机构：
[1] Univ Ulsan, Sch Mat Sci & Engn, Ulsan 44610, South Korea
[2] Korea Inst Ind Technol KITECH, Yangsan 50642, South Korea
来源：
KOREAN JOURNAL OF METALS AND MATERIALS | 2016年 / 54卷 / 02期
关键词：
thin film; sputtering; electrical properties; optical properties; x-ray diffraction; ZNO THIN-FILMS; BAND-GAP SHIFT; DOPED ZNO; THICKNESS;
D O I：
10.3365/KJMM.2016.54.2.113
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
To investigate the effect of a Ni buffer layer on the structural, electrical and optical properties of GZO (Ga Doped ZnO) thin films, GZO single layer and GZO/Ni bi-layered films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering without intentional substrate heating. GZO films had an optical transmittance of 87.1% in the visible wavelength region and an electrical resistivity of 1.0x10(-2) Omega cm, while GZO/Ni films had a lower resistivity of 1.2x10(-3) Omega cm and an optical transmittance of 82.4%. Based on the figure of merit, it is clear that a 2 nm thick Ni buffer layer enhanced the opto-electrical performance of GZO films for use as transparent conducting oxides in flexible display applications
引用
收藏
页码：113 / 116
页数：4
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