Relative angular precision in electron backscatter diffraction: A comparison between cross correlation and Hough transform based analysis

In the present study the relative angular resolution of an electron backscatter diffraction system based on Hough transform analysis has been determined with a silicon single crystal wafer. The resolution is found to be better than 0.1 degrees and can be easily improved by repetition of measurements. A test measurement on a BaFe2As2 thin film, where disorientations of 0.1 degrees and less are present, was performed using the cross correlation electron backscatter diffraction technique. The same measurement is evaluated with the Hough transform technique. Comparing both techniques give evidence of a relative resolution of better than 0.1 degrees. However, in specimen areas with strain inhomogeneities a deviation along one rotation axis can be observed.